PMV65UN,215 datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
О ДАТАШИТЕ
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МаркировкаPMV65UN,215
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ПроизводительNXP Semiconductors
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ОписаниеNXP Semiconductors PMV65UN,215 Continuous Drain Current: 2.2 A Drain-source Breakdown Voltage: 20 V Factory Pack Quantity: 3000 Fall Time: 12 ns Forward Transconductance Gfs (max / Min): 8.7 S Gate Charge Qg: 3.9 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 455 mW Resistance Drain-source Rds (on): 76 mOhms Rise Time: 18 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 ns RoHS: yes Drain-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 76 mOhms Forward Transconductance gFS (Max / Min): 8.7 S Typical Turn-Off Delay Time: 21 ns
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Количество страниц14 шт.
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Форматы файлаHTML, PDF
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